Ultrafast electron-phonon scattering in semiconductors studied by nondegenerate four-wave mixing

Authors
Betz, M Goger, G Leitenstorfer, A Ortner, K Becker, CR Bohm, G Laubereau, A
Citation
M. Betz et al., Ultrafast electron-phonon scattering in semiconductors studied by nondegenerate four-wave mixing, PHYS REV B, 60(16), 1999, pp. R11265-R11268
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
16
Year of publication
1999
Pages
R11265 - R11268
Database
ISI
SICI code
0163-1829(19991015)60:16<R11265:UESISS>2.0.ZU;2-6
Abstract
Nondegenerate four-wave-mixing allows one to monitor the femtosecond relaxa tion of free carriers in GaAs and CdTe at densities as low as 2 x 10(15) cm (-3). The energy relaxation time of electrons via LO-phonon emission is det ermined to be 240 +/- 20 fs in GaAs. In more polar CdTe, this time constant is found to be as short as 70 +/- 15 fs which is even shorter than the pho non oscillation period of 200 fs. [S0163-1829(99)51840-7].