Modelling the optical constants of GaAs: excitonic effects at E-1, E-1+Delta(1) critical points

Citation
Ab. Djurisic et Eh. Li, Modelling the optical constants of GaAs: excitonic effects at E-1, E-1+Delta(1) critical points, SEMIC SCI T, 14(11), 1999, pp. 958-960
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
14
Issue
11
Year of publication
1999
Pages
958 - 960
Database
ISI
SICI code
0268-1242(199911)14:11<958:MTOCOG>2.0.ZU;2-B
Abstract
Calculation of the optical constants of GaAs is presented. In this work we do not take into account excitonic effects at E-1 and E-1 + Delta(1) critic al points. In such a manner, fewer adjustable model parameters are required and the term with dubious physical interpretation describing excitons at E -1 and E-1 + Delta(1) is left out. Reasons for exclusion of this term are d iscussed in detail. In spite of the fewer terms describing the contribution s of different transitions to the dielectric function, we obtain excellent agreement with experimental data over the entire 0.125-6 eV range, with rel ative rms error for the refractive index equal to 2.6%.