Porous silicon pn junction light emitting diodes

This paper presents the results of a systematic study of porous silicon lig ht emitting diodes (LEDs). Porous silicon pn junction LEDs, both patterned and unpatterned, were fabricated using the standard anodization method as w ell as a novel technique developed for the anodization of heavily doped pn junction structures. The current-voltage, photoluminescence and electrolumi nescence properties of the various porous silicon pn junction LEDs were inv estigated. The devices fabricated by the standard method show electrolumine scence only under reverse bias conditions. The pn junctions fabricated by t he novel anodization technique show electroluminescence under forward bias conditions. The light emission mechanism in these devices is believed to be due to electron-hole injection in the silicon nanostructures forming the p orous silicon material.