Monte Carlo simulation of high-field transport and impact ionization in AlGaAs p(+)in(+) diodes

Authors
Dunn, GM Ghin, R Rees, GJ David, JPR Plimmer, S Herbert, DC
Citation
Gm. Dunn et al., Monte Carlo simulation of high-field transport and impact ionization in AlGaAs p(+)in(+) diodes, SEMIC SCI T, 14(11), 1999, pp. 994-1000
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
14
Issue
11
Year of publication
1999
Pages
994 - 1000
Database
ISI
SICI code
0268-1242(199911)14:11<994:MCSOHT>2.0.ZU;2-J
Abstract
We have used Monte Carlo simulation methods employing both realistic band s tructure and a simpler analytical approximation to investigate impact ioniz ation in bulk AlxGa1-xAs and also submicron p(+)in(+) diodes for x less tha n or equal to 40%. The calculated impact ionization rates in bulk AlxGa1-xA s compared well with previous experiments and the electron- and hole-initia ted current multiplication characteristics of the p(+)in(+) diodes were fou nd to agree very well with our experimental results for both the analytical and the numerical models.