Tin oxide growth in nanoporous silicon: an approach to an efficient solid state electrode

In this preliminary work, we show the ability of the Sol-Gel technique to i ntroduce a solid phase into the nanopores of porous silicon. From RBS-C ana lysis, a complete incorporation of both tin and oxygen atoms over most of t he porous layer thickness has been evidenced. TEM observations revealed the presence of small crystallites of cassiterite embedded in the porous layer . Providing that the silicon porosity does not exceed 70%, this solid phase does not degrade the skeleton of porous silicon and does not inhibit photo luminescence.