Injection statistics simulator for dynamic analysis of noise in mesoscopicdevices

Citation
T. Gonzalez et al., Injection statistics simulator for dynamic analysis of noise in mesoscopicdevices, SEMIC SCI T, 14(11), 1999, pp. L37-L40
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
14
Issue
11
Year of publication
1999
Pages
L37 - L40
Database
ISI
SICI code
0268-1242(199911)14:11<L37:ISSFDA>2.0.ZU;2-T
Abstract
We present a model for electron injection from thermal reservoirs, which is applied to particle simulations of one-dimensional mesoscopic conductors. The statistics of injected carriers is correctly described from non-degener ate to completely degenerate conditions. The model is validated by comparin g Monte Carlo simulations with existing analytical results for the case of ballistic conductors. An excellent agreement is found for the average and n oise characteristics, in particular, the fundamental unities of electrical and thermal conductances are exactly reproduced.