Spatially inhomogeneous oxygen precipitation in silicon

A theoretical model for point-defect precipitation in crystals, which is a generalization of the well-know Ham model, has been proposed. The equations obtained are helpful in describing the kinetics of oxygen precipitation in silicon, and in determining the kinetics of variation of the mean geometri cal dimensions of clusters. A theoretical model of spatially inhomogeneous precipitation has been developed. This model can be used to describe proces ses of internal gettering and creation of insulating layers in silicon. (C) 1999 American Institute of Physics. [S1063-7826(99)00111-8].