Av. Subashiev et al., Effects of heavy p doping on the polarized emission spectra and low-temperature luminescence spectra of GaAs/GaAsP strained-layer structures, SEMICONDUCT, 33(11), 1999, pp. 1182-1187
The optical orientation of electron spins in heavily doped, strained GaAs/G
aAsP layers with a deformation-split valence band is studied experimentally
. The observed polarized luminescence spectra and polarized photoemission (
electron emission) spectra are shown to be described well by a model which
allows for smearing of the edges of the bands by the fluctuation potential
due to impurities, degeneracy of the carriers at low temperatures, and indi
rect electron-phonon optical transitions. The dominant mechanism of electro
n spin relaxation in strained layers is found to be the Bir-Aronov-Pikus me
chanism. The parameters of the fluctuation potential and the parameters gov
erning carrier spin relaxation are determined. (C) 1999 American Institute
of Physics. [S1063-7826(99)00711-5].