Kv. Vasilevskii et al., Electrical characteristics and structural properties of ohmic contacts to p-type 4H-SiC epitaxial layers, SEMICONDUCT, 33(11), 1999, pp. 1206-1211
Epitaxial films grown by low-temperature liquid phase epitaxy on p-type 4H-
SiC were used as strongly doped subcontact layers for making low-resistance
contacts to the p-type material. The layers had a bulk resistivity of simi
lar to 0.02 Omega . cm and an aluminum atom concentration of similar to 1.5
x10(20) cm(-3). The absence of polytype inclusions and the distinct crystal
line quality of the strongly doped subcontact layers was confirmed by x-ray
diffraction methods. Ohmic contacts with resistivities less than 10(-4) Om
ega . cm(2) were prepared by depositing and then annealing multilayer metal
mixtures containing Al and Ti. The structural properties and energy charac
teristics of the resulting ohmic contacts are discussed. (C) 1999 American
Institute of Physics. [S1063-7826(99)01211-9].