Silicon carbide based semiconductor sensor for the detection of fluorocarbons

Authors
Moritz, W Fillipov, V Vasiliev, A Terentjev, A
Citation
W. Moritz et al., Silicon carbide based semiconductor sensor for the detection of fluorocarbons, SENS ACTU-B, 58(1-3), 1999, pp. 486-490
Citations number
9
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS B-CHEMICAL
ISSN journal
09254005 → ACNP
Volume
58
Issue
1-3
Year of publication
1999
Pages
486 - 490
Database
ISI
SICI code
0925-4005(19990921)58:1-3<486:SCBSSF>2.0.ZU;2-P
Abstract
The new large band gap semiconductor material SiC was used to develop a hig h temperature field-effect structure SiC/epiSiC/SiO2/LaF3/Pt. The response to different fluorocarbons as CF3CH2F, CF3CCl3, CHClF2, CF3CH2Cl and CCl3F was investigated. A complex behaviour was found for the temperature range 2 00-300 degrees C. The selective detection of fluorine containing molecules was shown for a temperature of 380 degrees C. The fluoride ion conducting m aterial LaF3 was proven to have the substantial role for the sensor detecti on principal. (C) 1999 Elsevier Science S.A. All rights reserved.