Citation
Z. Elbhiri et al., Chemically grafted field effect transistors for the detection of potassiumions, SENS ACTU-B, 58(1-3), 1999, pp. 491-496
Citations number
25
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS B-CHEMICAL
ISSN journal
09254005
→ ACNP
Volume
58
Issue
1-3
Year of publication
1999
Pages
491 - 496
Database
ISI
SICI code
0925-4005(19990921)58:1-3<491:CGFETF>2.0.ZU;2-V
Abstract
K+-ISFETs are prepared by grafting, on the silica gate insulator surface, s
ilylated crown-ether molecules which were synthesized for the first time. T
hree grafting reactions were tested. The responses of the grafted ISFETs ar
e sub-nernstian. They are analyzed through the modified site-binding model
and the density of grafted sites was found to be equal to 6 X 10(12) cm(-2)
with the chloro-silylated molecule and 13 x 10(12) cm(-2) with the dimethy
lamino-silylated molecule, the complexation constant of K+ ions being found
to be equal to 10(2.1). (C) 1999 Elsevier Science S.A. All rights reserved
.