This article presents a novel architecture of an ISFET sensor interface cir
cuit, monolithically integrated on a 3D MCM, part of a biomedical microsyst
em. It is a differential configuration with two ISFET devices (one with Si3
N4 ion sensitive layer, the other with SiO2 sensitive layer) and realized i
n a 2.5 mu m CMOS technology. The sensor interface is simple, has a current
output signal and low silicon area requirements. The circuit architecture
provides digital facilities, which makes possible the performance of the co
nfiguration been optimized during a calibration step of the system. (C) 199
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