Preparation of nickel oxide thin films for gas sensors applications

Citation
I. Hotovy et al., Preparation of nickel oxide thin films for gas sensors applications, SENS ACTU-B, 57(1-3), 1999, pp. 147-152
Citations number
7
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS B-CHEMICAL
ISSN journal
09254005 → ACNP
Volume
57
Issue
1-3
Year of publication
1999
Pages
147 - 152
Database
ISI
SICI code
0925-4005(19990907)57:1-3<147:PONOTF>2.0.ZU;2-R
Abstract
Nickel oxide (NiO) thin films were prepared by de reactive magnetron sputte ring from a nickel metal target in an Ar + O-2 mixed atmosphere in two sput tering modes. The oxygen content in the gas mixture varied from 15% to 45%. The films prepared in the oxide-sputtering mode were amorphous while the f ilms in metal-sputtering mode exhibited polycrystalline (fcc) NiO phase. In this case TEM observations showed a dense fine-grained structure with the grain size in the range 4-10 nm and AFM micrograph showed a rough surface w ith RMS = 2.21 nm. We have found that good NiO stoichiometric films are obt ainable with a polycrystalline (fcc) structure at 40% oxygen content in the metal-sputtering mode. (C) 1999 Elsevier Science S.A. All lights reserved.