Formation and migration energies of interstitials in silicon under strain conditions

Simulation calculations are conducted for Si substrates to analyze the form ation and diffusion energies of interstitials under strain condition using statics methods based on a Stillinger-Weber-type potential function. Defect s in the vicinity of the surface region and in the bulk are examined, and t he role played by compressive and tensile strains on the energetics of inte rstitials is investigated. The results indicate that strain alters defect e nergetics, which, in turn, modifies their diffusion characteristics. (C) 19 99 Elsevier Science B.V. All rights reserved.