Crystallization kinetics of amorphous silicon carbide derived from polymeric precursors

Citation
D. Kurtenbach et al., Crystallization kinetics of amorphous silicon carbide derived from polymeric precursors, THERMOC ACT, 337(1-2), 1999, pp. 155-161
Citations number
28
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
THERMOCHIMICA ACTA
ISSN journal
00406031 → ACNP
Volume
337
Issue
1-2
Year of publication
1999
Pages
155 - 161
Database
ISI
SICI code
0040-6031(19991011)337:1-2<155:CKOASC>2.0.ZU;2-H
Abstract
Phase separation processes like nucleation, crystallization and degradation of a polymer-derived amorphous silicon carbide precursor were quantified b y means of thermoanalytical methods (DTA/TG). It is shown that the crystal size of the nanostructure could be controlled and limited by nuclei-inducin g heat treatments. Furthermore, the justification for application of the JM AK theory was partially given. A comparison to amorphous SiC processed by o ther means (ion implanted) was drawn and reveals surprising similarities. ( C) 1999 Elsevier Science B.V. All rights reserved.