Effect of an initially sulphur-rich sprayed solution on CuInS2 thin films

Authors
Bihri, H Abd-Lefdil, M
Citation
H. Bihri et M. Abd-lefdil, Effect of an initially sulphur-rich sprayed solution on CuInS2 thin films, THIN SOL FI, 354(1-2), 1999, pp. 5-8
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
354
Issue
1-2
Year of publication
1999
Pages
5 - 8
Database
ISI
SICI code
0040-6090(19991008)354:1-2<5:EOAISS>2.0.ZU;2-P
Abstract
Copper indium disulphide CuInS2 thin films were prepared by spray pyrolysis technique. Improvement of CuInS2 films stoichiometry was found by increasi ng the sulphur content in the sprayed solution. X-ray diffraction, transmis sion and electrical resistivity results are discussed as a function of the film composition. The films were single-phase and showed a preferred orient ation (112), with chalcopyrite characteristic peak (103) for high sulphur c ontent. P-type CuInS2 with a conductivity value in the range 10(-1)-10(-3) Omega(-1) cm(-1) and a gap energy of about 1.4 eV were obtained. (C) 1999 E lsevier Science S.A. All rights reserved.