A self-ion assisted beam (SIAB) source based upon unvala electron beam scheme

Citation
Wk. Choi et al., A self-ion assisted beam (SIAB) source based upon unvala electron beam scheme, THIN SOL FI, 354(1-2), 1999, pp. 29-33
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
354
Issue
1-2
Year of publication
1999
Pages
29 - 33
Database
ISI
SICI code
0040-6090(19991008)354:1-2<29:ASAB(S>2.0.ZU;2-O
Abstract
Cu thin film was deposited by a self-ion assisted beam source (SIAB) and th e assessment of the Cu films was given. Some characteristics of the source and the experimental procedure are described at various conditions such as total power, ionization efficiency, and ion current vs. deposition rate. Th e dependence of crystalline structure, impurity concentration, and resistiv ity of the Cu films deposited by SIAB on acceleration voltage are discussed . (C) 1999 Elsevier Science S.A. All rights reserved.