Cu thin film was deposited by a self-ion assisted beam source (SIAB) and th
e assessment of the Cu films was given. Some characteristics of the source
and the experimental procedure are described at various conditions such as
total power, ionization efficiency, and ion current vs. deposition rate. Th
e dependence of crystalline structure, impurity concentration, and resistiv
ity of the Cu films deposited by SIAB on acceleration voltage are discussed
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