Microstructure and metal-insulator transition of NdNiO3 thin films on various substrates

Authors
Laffez, P Zaghrioui, M Monot, I Brousse, T Lacorre, P
Citation
P. Laffez et al., Microstructure and metal-insulator transition of NdNiO3 thin films on various substrates, THIN SOL FI, 354(1-2), 1999, pp. 50-54
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
354
Issue
1-2
Year of publication
1999
Pages
50 - 54
Database
ISI
SICI code
0040-6090(19991008)354:1-2<50:MAMTON>2.0.ZU;2-R
Abstract
We succeeded in preparing single phase NdNiO3 thin films with a thermally d riven metal-insulator transition by RF sputtering and subsequent annealing under oxygen pressure. The films were strongly oriented and their electrica l properties have been studied between 80 and 300 K. The influence of the s ubstrate on the transport properties was studied. The films exhibit a metal -insulator transition around 160 K when the bulk shows a transition around 200 K. (C) 1999 Elsevier Science S.A, All rights reserved.