Cw. Chung et I. Chung, Effect of pre-annealing on physical and electrical properties of SrBi2Ta2O9 thin films prepared by chemical solution deposition, THIN SOL FI, 354(1-2), 1999, pp. 111-117
SrBi2Ta2O9 (SBT) thin films with Bi layered-perovskite structure were forme
d by chemical solution deposition method. The effects of preannealing on ph
ysical and electrical properties of SET thin films were investigated by emp
loying rapid thermal annealing (RTA) and furnace annealing. SET thin films
pre-annealed by furnace after each spin-coating exhibited better surface mo
rphology and electrical properties than those pre-annealed by RTA. The crys
tallization mechanisms of SET thin films with pre-annealing by RTA and furn
ace were examined by Xray diffraction (XRD) analysis and scanning electron
micrograph (SEM). Finally, the optimum condition of furnace pre-annealing (
700 degrees C for 30 min) was found to give remanent polarization (2Pr) of
about 20 mu C/cm(2), leakage current density of less than 10(-7) A/cm(2), a
nd breakdown voltage of 15 V. (C) 1999 Elsevier Science S.A. All rights res
erved.