Effect of pre-annealing on physical and electrical properties of SrBi2Ta2O9 thin films prepared by chemical solution deposition

Citation
Cw. Chung et I. Chung, Effect of pre-annealing on physical and electrical properties of SrBi2Ta2O9 thin films prepared by chemical solution deposition, THIN SOL FI, 354(1-2), 1999, pp. 111-117
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
354
Issue
1-2
Year of publication
1999
Pages
111 - 117
Database
ISI
SICI code
0040-6090(19991008)354:1-2<111:EOPOPA>2.0.ZU;2-C
Abstract
SrBi2Ta2O9 (SBT) thin films with Bi layered-perovskite structure were forme d by chemical solution deposition method. The effects of preannealing on ph ysical and electrical properties of SET thin films were investigated by emp loying rapid thermal annealing (RTA) and furnace annealing. SET thin films pre-annealed by furnace after each spin-coating exhibited better surface mo rphology and electrical properties than those pre-annealed by RTA. The crys tallization mechanisms of SET thin films with pre-annealing by RTA and furn ace were examined by Xray diffraction (XRD) analysis and scanning electron micrograph (SEM). Finally, the optimum condition of furnace pre-annealing ( 700 degrees C for 30 min) was found to give remanent polarization (2Pr) of about 20 mu C/cm(2), leakage current density of less than 10(-7) A/cm(2), a nd breakdown voltage of 15 V. (C) 1999 Elsevier Science S.A. All rights res erved.