Indium oxide (In2O3) thin films have been prepared by sol-gel and RF sputte
ring techniques. The sol-gel film appeared to be much more sensitive to ozo
ne compared to the RF sputtered film. The morphology of both films was exam
ined by SEM, while their chemical composition was analyzed using X-ray phot
oelectron spectroscopy (XPS) in order to understand the properties responsi
ble for the high sensitivity of sol-gel films. The examination results show
ed that the sol-gel films are very porous and uniform in grain size, but th
e RF films are relatively dense and of coalescent grains. XPS analysis also
highlighted that there may be oxygen vacancies on the surface of sol-gel f
ilms. The large surface areas of sol-gel films and oxygen deficiency in the
film structure are responsible for its higher sensitivity. (C) 1999 Elsevi
er Science S.A. All rights reserved.