Room-temperature continuous-wave operation of a single-layered 1.3 mu m quantum dot laser

Citation
G. Park et al., Room-temperature continuous-wave operation of a single-layered 1.3 mu m quantum dot laser, APPL PHYS L, 75(21), 1999, pp. 3267-3269
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
21
Year of publication
1999
Pages
3267 - 3269
Database
ISI
SICI code
0003-6951(19991122)75:21<3267:RCOOAS>2.0.ZU;2-M
Abstract
Room-temperature continuous-wave operation of a 1.3 mu m quantum dot laser is reported. The threshold current for a single layer active region with p- up mounting is only 4.1 mA with a threshold current density of 45 A/cm(2). The minimum room temperature threshold current density is 25 A/cm(2) for pu lsed operation. Cryogenic and temperature dependent measurements are perfor med on broad-area lasers fabricated from the same active material. At 4 K t he broad-area threshold current density for uncoated facets is 6 A/cm(2). ( C) 1999 American Institute of Physics. [S0003-6951(99)04147-9].