Ultrafast carrier trapping in Be-doped low-temperature-grown GaAs

Authors
Krotkus, A Bertulis, K Dapkus, L Olin, U Marcinkevicius, S
Citation
A. Krotkus et al., Ultrafast carrier trapping in Be-doped low-temperature-grown GaAs, APPL PHYS L, 75(21), 1999, pp. 3336-3338
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
21
Year of publication
1999
Pages
3336 - 3338
Database
ISI
SICI code
0003-6951(19991122)75:21<3336:UCTIBL>2.0.ZU;2-O
Abstract
Time-resolved photoluminescence is used to study low-temperature-grown (LTG ) GaAs with Be doping. It is observed that the carrier trapping time in the as-grown LTG GaAs increases with Be doping. Similar effect is observed als o in the annealed samples doped with less than 3 x 10(19) cm(-3) of Be. At higher doping levels, the trapping time in these samples is abruptly reduce d to below 100 fs. This behavior is attributed to changes in As antisite de nsity and the compensation effect of Be. (C) 1999 American Institute of Phy sics. [S0003-6951(99)00447-7].