Ohmic contacts to p-type ZnSe using a ZnSe/BeTe superlattice

Authors
Vigue, F Brunet, P Lorenzini, P Tournie, E Faurie, JP
Citation
F. Vigue et al., Ohmic contacts to p-type ZnSe using a ZnSe/BeTe superlattice, APPL PHYS L, 75(21), 1999, pp. 3345-3347
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
21
Year of publication
1999
Pages
3345 - 3347
Database
ISI
SICI code
0003-6951(19991122)75:21<3345:OCTPZU>2.0.ZU;2-U
Abstract
Various configurations of pseudograded BeTe/ZnSe superlattices have been in vestigated to form a nonalloyed contact onto nitrogen-doped p-type ZnSe lay ers. Best results were obtained by using a fully N-doped superlattice with a 20-ML-thick pseudoperiod and with the thickness of individual layers in t he pseudoperiod varying by 1 ML steps. A specific contact resistance of 6 x 10(-2) Omega cm(2) has been measured for a ZnSe p-type doping level of 2 x 10(17) cm(-3). Truly perfect ohmic contact is obtained. (C) 1999 American Institute of Physics. [S0003-6951(99)02147-6].