Colossal magnetoresistance effect in perovskite-type La-Sn-Mn-O epitaxial films

Authors
Guo, XX Dai, SY Zhou, YL Yang, GZ Chen, ZH
Citation
Xx. Guo et al., Colossal magnetoresistance effect in perovskite-type La-Sn-Mn-O epitaxial films, APPL PHYS L, 75(21), 1999, pp. 3378-3380
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
21
Year of publication
1999
Pages
3378 - 3380
Database
ISI
SICI code
0003-6951(19991122)75:21<3378:CMEIPL>2.0.ZU;2-#
Abstract
La-Sn-Mn-O (LSnMO) thin films epitaxially grown on single-crystal substrate s by pulsed-laser deposition are reported. The films have a perovskite stru cture and perform the colossal magnetoresistance effect with the maximum ma gnetoresistance (MR) ratio of 10(3)% (at 233 K and 6 T). The dependence of electrical transport and magnetic properties on the film thickness has been studied. The analyses reveal that the electrical transport, in contrast wi th the magnetic phase transition, is more sensitive to the thickness of the films. (C) 1999 American Institute of Physics. [S0003-6951(99)03847-4].