Citation
Ru. Barz et al., Growth of gallium orthophosphate single crystals under hydrothermal conditions, CRYST RES T, 34(9), 1999, pp. 1121-1127
Citations number
12
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CRYSTAL RESEARCH AND TECHNOLOGY
ISSN journal
02321300
→ ACNP
Volume
34
Issue
9
Year of publication
1999
Pages
1121 - 1127
Database
ISI
SICI code
0232-1300(1999)34:9<1121:GOGOSC>2.0.ZU;2-W
Abstract
Gallium orthophosphate (GaPO4) single crystals have been grown from phospho
ric acid solutions under hydrothermal conditions. The crystals have been st
udied in terms of twinning because of the strong effect of this structural
defect on the piezoelectric properties. The growth rates of individual face
s have been compared to each other by considering the dipyramidal habit of
the grown crystals.