The effect of annealing temperature on electrical properties of SrBi2Ta2O9/insulators/Si(MFIS) structure for NDRO-type FRAM devices

We have fabricated Pt/SBT/insulator/Si structure for the transistor gate in MFIS-FET and investigated the electrical properties of MFIS structure with various insulator materials. SrBi2Ta2O9 films as a ferroelectric layer wer e deposited by metal organic decomposition (MOD) technique, on various insu lator structures including SiON, and Al2O3 as well as on Pt/Ti/SiO2/Si stru ctures. The effect of annealing temperature on the electrical properties of MFIS structures was investigated in order to analyze the applicability to conventional CMOS process. Although the remnant polarization of SET films f or MFM structure was increased with increasing annealing temperature, the m emory window which has a relationship with remnant polarization of ferroele ctrics was differently displayed with insulator structure in MFIS structure .