An improved transmission-line model for MOS transistors

In this paper, we present a high-frequency small-signal model for MOSFET de vices operating in the saturation regime. The model is based on a transmiss ion-line treatment of the gale region, taking into account the distributed resistance-capacitance effects along the width of the device. The gate-sour ce resistance, as well as the induced gate noise arising from the nonquasi- static operation, are included in the model. Closed-form solution of the no ise and the y-parameters are obtained, The model is verified with measureme nts of an 0.8-mu m device. The y-parameters model is in close agreement wit h the measured parameters up to 15 GHz, which is higher than the f(T) of th e device. The noise model was also verified by comparing the modeled and me asured noise resistance.