In this paper, we present a high-frequency small-signal model for MOSFET de
vices operating in the saturation regime. The model is based on a transmiss
ion-line treatment of the gale region, taking into account the distributed
resistance-capacitance effects along the width of the device. The gate-sour
ce resistance, as well as the induced gate noise arising from the nonquasi-
static operation, are included in the model. Closed-form solution of the no
ise and the y-parameters are obtained, The model is verified with measureme
nts of an 0.8-mu m device. The y-parameters model is in close agreement wit
h the measured parameters up to 15 GHz, which is higher than the f(T) of th
e device. The noise model was also verified by comparing the modeled and me
asured noise resistance.