Temperature dependence of Young's modulus and degradation of chemical vapor deposited diamond

Citation
F. Szuecs et al., Temperature dependence of Young's modulus and degradation of chemical vapor deposited diamond, J APPL PHYS, 86(11), 1999, pp. 6010-6017
Citations number
37
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
11
Year of publication
1999
Pages
6010 - 6017
Database
ISI
SICI code
0021-8979(199912)86:11<6010:TDOYMA>2.0.ZU;2-U
Abstract
Temperature dependent measurements of Young's modulus were performed for th e first time on black and transparent bulk material of chemical vapor depos ited (CVD) diamond by a dynamic three point bending method in a temperature range from -150 to 850 degrees C. The CVD specimens correspond to a room-t emperature Young's modulus of single crystal diamond (1143 GPa). A lower Yo ung's modulus of polycrystalline diamond is caused by crystal imperfections and impurities. At temperatures between -150 and 600 degrees C (black type ) or -150 and 700 degrees C (transparent type) the Young's modulus is only slightly temperature dependent and decreases monotonically with an average temperature coefficient of -1.027x10(-4) K-1, which is much higher than the oretically expected. At higher temperatures the bending stiffness and appar ent Young's modulus of the diamond beams are drastically reduced to one thi rd of the initial value before fracture occurs due to oxygen etching effect s in air. The onset temperature of this degradation phenomenon and the rate of decline are dependent on grain size, texture and the crystal lattice im perfections of the CVD diamond material. (C) 1999 American Institute of Phy sics. [S0021-8979(99)04723-4].