Thermal stability and oxygen-loss characteristics of Pt(O) films prepared by reactive sputtering

Pt(O) films having compositions ranging from pure Pt to amorphous platinum oxide a-PtOx (x similar to 1.4) were prepared by reactive sputtering and ex amined during and after heating to temperatures used for deposition and pro cessing of high-epsilon (HE) and ferroelectric (FE) materials (400-650 degr ees C). A two stage decomposition process was observed for a-PtOx (x simila r to 1.4) films heated in N-2, with the first stage of decomposition beginn ing at temperatures well below 400 degrees C. In an O-2 ambient, decomposit ion was accompanied by formation of a crystalline Pt3O4 phase prior to comp lete decomposition to metallic Pt. However, the relatively slow rate of oxy gen loss from a-PtOx suggests that significant amounts of oxygen should rem ain in Pt(O) electrodes after HE/FE layer deposition. (C) 1999 American Ins titute of Physics. [S0021-8979(99)05623-6].