Electroluminescence and photoelectric properties of type II broken-gap n-In(Ga)As(Sb)/N-GaSb heterostructures

Layers of n-InAs and n-InGaAsSb were grown by metalorganic vapor phase epit axy and liquid phase epitaxy on N-GaSb substrates. The electroluminescence, current-voltage characteristics and photocurrent spectra of these heterost ructures were studied at low temperatures. It was shown that GaSb/In(Ga)As( Sb) with InAs-rich narrow-gap solid solutions are broken-gap heterojunction s of type II at 77 and 300 K. Intense electroluminescence of the N-GaSb/n-I n(Ga)As(Sb) heterostructures was found in the spectral range of 3-4 mu m at 77 K. The origin of radiative recombination at the N-n type II broken-gap heterointerface is proposed and is in agreement with the experimental resul ts for both systems. (C) 1999 American Institute of Physics. [S0021-8979(99 )02722-X].