Undesirable contaminants possibly introduced in LiNbO3 electro-optic devices

Citation
H. Nagata et al., Undesirable contaminants possibly introduced in LiNbO3 electro-optic devices, J APPL PHYS, 86(11), 1999, pp. 6342-6350
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
11
Year of publication
1999
Pages
6342 - 6350
Database
ISI
SICI code
0021-8979(199912)86:11<6342:UCPIIL>2.0.ZU;2-#
Abstract
Inorganic contaminants in the fabrication of LiNbO3 optical waveguide devic es are examined with regard to their effect on the ultimate device performa nce and quality. We find a possibility that some chemicals such as a photor esist developer, etc., leave contaminants including silicon and alkalis on the LiNbO3 wafer, and result in an increase of light propagation loss, a pe aling of the SiO2 layer from the wafer, and a large dc drift. (C) 1999 Amer ican Institute of Physics. [S0021-8979(99)08023-8].