Dielectric loss anomaly of BaBiO3

Citation
Sh. Lee et al., Dielectric loss anomaly of BaBiO3, J APPL PHYS, 86(11), 1999, pp. 6351-6354
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
11
Year of publication
1999
Pages
6351 - 6354
Database
ISI
SICI code
0021-8979(199912)86:11<6351:DLAOB>2.0.ZU;2-U
Abstract
Dielectric properties of oxygen deficient BaBiO3-delta have been analyzed, and dielectric loss anomalies at 175 and 225 K were found, which were depen dent on oxygen deficiency. The activation energies corresponding to the rel axation processes of dielectric anomalies at 175 and 225 K were 0.26 and 0. 50 eV, respectively. The dielectric anomaly at 175 K is believed to be caus ed by hole movement from an occupied Bi 6s band to hole polaron accommodati ng band state. Another anomaly at 225 K is believed to occur from the hoppi ng of a hole between a Bi 6s band and the Fermi level. (C) 1999 American In stitute of Physics. [S0021-8979(99)05023-9].