Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells

The implantation-induced intermixing depth profile for 100 keV Ga+ ions was determined by photoluminescence measurements on a series of samples contai ning quantum wells at variable depth from the surface but identical thickne ss. They were uniformly implanted and subsequently a rapid thermal annealin g was applied. The measured maximum of the intermixing occurred at a depth of about 70 nm, significantly deeper than theoretical predictions. These re sults are important for achieving sufficient intermixing with a low implant ation dose, thereby optimizing crystal quality and lateral resolution. (C) 1999 American Institute of Physics. [S0021-8979(99)00323-0].