S. Zangooie et al., Investigation of optical anisotropy of refractive-index-profiled porous silicon employing generalized ellipsometry, J MATER RES, 14(11), 1999, pp. 4167-4175
Porosity depth profiles in porous silicon were realized by time modulation
of the applied current density during electrochemical etching of crystallin
e silicon. The samples were investigated by variable angle spectroscopic el
lipsometry. Using a basic optical model based on isotropy assumptions and t
he Bruggeman effective medium approximation, deviations from an ideal profi
le in terms of an interface roughness between the silicon substrate and the
porous silicon layer and a compositional gradient normal to the surface we
re revealed. Furthermore, optical anisotropy of the sample was investigated
by generalized ellipsometry. The anisotropy was found to be uniaxial with
the optic axis tilted from surface normal by about 25 degrees. The material
was also found to exhibit positive birefringence.