The mechanism for grain growth of beta-SiC was investigated by annealing ho
t-pressed beta-SiC-oxynitride glass (Y-Mg-Si-Al-O-N) ceramics at 1800 degre
es C. An observed decrease in grain growth with increasing weight fraction
of liquid confirms a diffusion-controlled growth mechanism in the system. T
he growth of nearly spherical beta-SiC grains in the annealed specimen also
supports the above conclusion.