Citation
Yw. Kim et al., Mechanism of grain growth in liquid-phase-sintered beta-SiC, J MATER RES, 14(11), 1999, pp. 4291-4293
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS RESEARCH
ISSN journal
08842914
→ ACNP
Volume
14
Issue
11
Year of publication
1999
Pages
4291 - 4293
Database
ISI
SICI code
0884-2914(199911)14:11<4291:MOGGIL>2.0.ZU;2-7
Abstract
The mechanism for grain growth of beta-SiC was investigated by annealing ho
t-pressed beta-SiC-oxynitride glass (Y-Mg-Si-Al-O-N) ceramics at 1800 degre
es C. An observed decrease in grain growth with increasing weight fraction
of liquid confirms a diffusion-controlled growth mechanism in the system. T
he growth of nearly spherical beta-SiC grains in the annealed specimen also
supports the above conclusion.