Gas-phase nucleation during chemical vapor deposition of copper films and its effect on the resistivity of deposited films

Authors
Rauf, IA Siemsen, R Grunwell, M Egerton, RF Sayer, M
Citation
Ia. Rauf et al., Gas-phase nucleation during chemical vapor deposition of copper films and its effect on the resistivity of deposited films, J MATER RES, 14(11), 1999, pp. 4345-4350
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS RESEARCH
ISSN journal
08842914 → ACNP
Volume
14
Issue
11
Year of publication
1999
Pages
4345 - 4350
Database
ISI
SICI code
0884-2914(199911)14:11<4345:GNDCVD>2.0.ZU;2-F
Abstract
A study of the electrical resistivity and microstructure of thin copper fil ms deposited by low-pressure chemical vapor deposition from copper (I) hexa fluoroacetylacetonate vinyltrimethylsilane (Cupra Select) was undertaken. E vidence for the nucleation of solid copper in the gas phase at substrate te mperatures of about 250 degrees C is presented. A process to predict the ef fects of gas-phase nucleation and growth on the electrical resistivity of t he resulting film is discussed.