An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfu lly prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SET so lution by retarding the hydrolysis and condensation rates. The crystallinit y and the microstructure of the SET thin films improved with increasing ann ealing temperature and were strongly correlated with the ferroelectric prop erties of the SET thin films. The films annealed at 800 degrees C exhibited low leakage current density, low voltage saturation, high remanent polariz ation, and good fatigue characteristics at least up to 10(10) switching cyc les, indicating favorable behavior for memory applications.