Bi12TiO20 (BTO); Bi12GaxBi1-xO19.5 (BGaO); and Bi-12(M1/3P2/3)O-20, M = Cd,
Zn, and Ni (BMPO) thin films were prepared by pulsed laser deposition usin
g a KrF excimer laser on (100)Y-stabilized zirconia (YSZ), (100)Bi12GeO20 (
BGO), and (110)Bi12SiO20 (BSO) crystalline substrates. All these films have
a sillenite structure. On (100)YSZ the silenite is oriented as {310} with
the [130] direction parallel to the [021]YSZ directions ([130]{310}BTO\\[02
1]{100}YSZ). On (100)BGO and (110)BSO the sillenite film reproduces the sub
strate orientation, and the films formed are able to channel He+ particles.
The optimum deposition temperatures for BTO and BGaO are 600 and 550 degre
es C, respectively. Higher temperatures must be avoided to minimize the nuc
leation of Bi-deficient phases due to the diffusion of Bi into the YSZ subs
trates. BMPO films are polycrystalline. The lattice parameters of these fil
ms were determined. The crystalline films support guided optical modes. The
refractive indices obtained for the films are close to those measured in b
ulk crystals, being slightly larger for films deposited on isomorphous sill
enite substrates. The crystalline films deposited on YSZ are photoconductor
s when excited in the green and blue spectral regions.