UV processing of oriented KTa0.50Nb0.50O3 thin firms

Patterned KTa0.50Nb0.50O3 (KTN50) thin films with a (100) preferred orienta tion were successfully crystallized at 700 degrees C on MgO(100) substrates . Both benzoylacetone (BZAC)-modified KTN precursor and 2-ethoxyethanol (EG MEE)-modified KTN precursor films showed charge-transfer UV absorption. The decrease in CH and CO absorptions in the IR spectra for the EGMEE-modified precursor was more rapid than that in the BZAC-modified precursor. Perovsk ite KTN films with a prominent (100) orientation crystallized at 700 degree s C on MgO(100) substrates from both systems. However, the epitaxy of KTN f ilms from the EGMEE-modified precursor combined with UV treatment was bette r than that from the BZAC-modified precursor. The optical transmittance of KTN films hom the EGMEE-modified precursor showed a better interference fri nge than that from the BZAC-modified precursor. W-treated KTN films on Pt(1 00)MgO(100) substrates, which were derived from the EGMEE-modified precurso r, revealed the highest dielectric constant and the lowest loss. Patterned KTN films from the EGMEE-modified precursor had a smooth and pore-free surf ace, according to scanning electron microscopy (SEM) observation.