Influence of surface material on the boron chloride density in inductivelycoupled discharges

The relative density of BCl radicals has been measured in a modified Applie d Materials decoupled plasma source commercial metal etch chamber using las er-induced fluorescence. In plasmas containing mixtures of BCl3 with Cl-2, Ar, and/or N-2, the relative BCl density was measured as a function of sour ce and bias power, pressure, flow rate, BCl3/Cl-2 ratio, and argon addition . To determine the influence of surface materials on the bulk plasma proper ties, the relative BCl density was measured using four different substrate types; aluminum, alumina, photoresist, and photoresist-patterned aluminum. In most cases, the relative BCl density was highest above photoresist-coate d wafers and lowest above blanket aluminum wafers. The BCl density increase d with increasing source power and the ratio of BCl3 to Cl-2, while the add ition of N-2 to a BCl3/Cl-2, plasma resulted in a decrease in BCl density. The BCl density was relatively insensitive to changes in the other plasma p arameters. (C) 1999 American Vacuum Society. [S0734-2101(99)04806-X].