We report a new method for controlling the spatial distribution of reactive
chemical species in a parallel-plate plasma reactor, by means of a variabl
e-impedance load placed between the unpowered electrode and ground. The tec
hnique was demonstrated in 89% CF4/11% O-2 and 51% C2F6/49% O-2 chamber-cle
aning plasmas at 13.3-133 Pa (0.1-1.0 Torr) in a Gaseous Electronics Confer
ence Reference Cell. The rf current and voltage at both electrodes were mea
sured, and plasma spatial characteristics were observed using two-dimension
al (2D) planar laser-induced fluorescence of the CF2 radical and 2D broadba
nd optical emission measurements. By adjusting the load impedance to cancel
the impedance of stray capacitances in parallel with the load, or the shea
th capacitance in series with the load, the rf current at the load electrod
e could be made higher or lower than the current received when the electrod
e is grounded. When the rf current at the load electrode was minimized, reg
ions of intense optical emission and high CF2 density were shifted radially
outward from the center of the reactor. When the rf current at the load el
ectrode was maximized, regions of intense optical emission and high CF2 den
sity shifted radially inward, and the distribution of CF2 across the electr
ode surfaces became more uniform. These results suggest that variable loads
could be used to direct reactive species in chamber-cleaning plasmas to th
e surfaces most in need of cleaning, or to increase the radial uniformity o
f reactive species in etching plasmas. [S0734-2101(99)00706-X].