Study of CN films synthesized by facing target sputtering

Citation
Y. Wang et al., Study of CN films synthesized by facing target sputtering, J VAC SCI A, 17(6), 1999, pp. 3308-3311
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
17
Issue
6
Year of publication
1999
Pages
3308 - 3311
Database
ISI
SICI code
0734-2101(199911/12)17:6<3308:SOCFSB>2.0.ZU;2-2
Abstract
CN films were made by a facing target sputtering system. X-ray diffraction, x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and Raman spectroscopy spectra were measured to investigate the structure a nd the binding state of the film. The films an amorphous and the N/C increa ses as the N-2 partial pressure increases and it reaches 0.46 when the N-2? pressure is 100%. The N incorporated C forms N-sp(2) C and N-sp(3) C mainl y and there is a small amount of C drop N. The incorporated N causes struct ural disorder of the C films and a reduction in the friction coefficient of the films. (C) 1999 American Vacuum Society. [S0734-2101(99)01206-3].