Oxygen doping effect on Ge-Sb-Te phase change optical disks

Citation
A. Ebina et al., Oxygen doping effect on Ge-Sb-Te phase change optical disks, J VAC SCI A, 17(6), 1999, pp. 3463-3466
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
17
Issue
6
Year of publication
1999
Pages
3463 - 3466
Database
ISI
SICI code
0734-2101(199911/12)17:6<3463:ODEOGP>2.0.ZU;2-3
Abstract
High performance phase change optical recording disk has been developed by using an oxygen-doped Ge-Sb-Te recording layer. The 5X10(5) overwrite cycle s were achieved with this 6 at.% oxygen-doped phase change optical recordin g disk. The transmission electron microscope observation shows that the cry stal grain size was enlarged and the "self-sharpening effect" disappeared w ith increasing of oxygen concentration. It is thought that the oxygen dopin g made it easy to grow the uniform large grain size without the self-sharpe ning effect around the amorphous mark and therefore, the overwrite cyclabil ity of the phase change optical recording disk was improved. (C) 1999 Ameri can Vacuum Society. [S0734-2101(99)01606-1].