Mechanical stress reduction in PECVD a-Si : H thin films

Authors
Alzar, CLG
Citation
Clg. Alzar, Mechanical stress reduction in PECVD a-Si : H thin films, MAT SCI E B, 65(2), 1999, pp. 123-126
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
65
Issue
2
Year of publication
1999
Pages
123 - 126
Database
ISI
SICI code
0921-5107(19991115)65:2<123:MSRIPA>2.0.ZU;2-J
Abstract
An experimental study on stress in hydrogenated amorphous silicon (a-Si:H) films is presented. To explain the physical origin of the stress, a model b ased on the atomic silicon clusters interaction is introduced. Our results show that the stress can be reduced using the model considerations. This me chanical stress reduction is achieved preserving low values of the hydrogen concentration in the films, a feature that is important for electronic app lications of this material. (C) 1999 Elsevier Science S.A. All rights reser ved.