A. Nemcsics et al., Investigation of morphology and fractal behaviour on compound semiconductor surface after electrochemical layer removal, MICROEL REL, 39(10), 1999, pp. 1505-1509
The electrochemical method is a very versatile tool for characterization an
d processing of compound semiconductors. In this paper we investigate the s
urface morphology and pattern formation of GaAs and InP surfaces after elec
trochemical layer removal. Different aqueous HCl based electrolites were us
ed for the layer removal. The investigation of the surface pattern formatio
n was carried out using the box counting method. The pictures of surface pa
tterns were digitised and analysed using high resolution bitmap. The fracta
l dimension depends on the semiconductor materials, electrolyte and conditi
on of etching, too. (C) 1999 Elsevier Science Ltd. All rights reserved.