Synthesis and electrical properties of p-type homoepitaxial (100) diamond films formed by microwave plasma-assisted chemical vapor deposition using trimethylboron

Authors
Tsubota, T Fukui, T Saito, T Kusakabe, K Morooka, S Maeda, H
Citation
T. Tsubota et al., Synthesis and electrical properties of p-type homoepitaxial (100) diamond films formed by microwave plasma-assisted chemical vapor deposition using trimethylboron, NEW DIAM FR, 9(2), 1999, pp. 126-126
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
ISSN journal
13449931 → ACNP
Volume
9
Issue
2
Year of publication
1999
Pages
126 - 126
Database
ISI
SICI code
1344-9931(1999)9:2<126:SAEPOP>2.0.ZU;2-I