Electric properties of interface between H-terminated diamond and electrolyte solution

Citation
K. Kitatani et al., Electric properties of interface between H-terminated diamond and electrolyte solution, NEW DIAM FR, 9(2), 1999, pp. 127-128
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
ISSN journal
13449931 → ACNP
Volume
9
Issue
2
Year of publication
1999
Pages
127 - 128
Database
ISI
SICI code
1344-9931(1999)9:2<127:EPOIBH>2.0.ZU;2-Y
Abstract
Ion-sensitive field-effect transistor (ISFET) sensors have advantages for v arious applications such as use in the medical field and environmental meas urement. However, the operation tends to be unstable owing to impurities, a s the sensing area is exposed to the surrounding. Therefore, it is desired that the material used as ISFET microsensors be inert.