Fabrication of 1 mu m gate diamond FET using self-aligned gate process

Authors
Umezawa, H Kitatani, K Kinumura, K Seto, N Tsugawa, K Kawarada, H
Citation
H. Umezawa et al., Fabrication of 1 mu m gate diamond FET using self-aligned gate process, NEW DIAM FR, 9(2), 1999, pp. 151-153
Citations number
2
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY
ISSN journal
13449931 → ACNP
Volume
9
Issue
2
Year of publication
1999
Pages
151 - 153
Database
ISI
SICI code
1344-9931(1999)9:2<151:FO1MMG>2.0.ZU;2-#