X-ray measurement of the subpixel structure of the XMM EPIC MOS CCD

Citation
H. Tsunemi et al., X-ray measurement of the subpixel structure of the XMM EPIC MOS CCD, NUCL INST A, 437(2-3), 1999, pp. 359-366
Citations number
13
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
437
Issue
2-3
Year of publication
1999
Pages
359 - 366
Database
ISI
SICI code
0168-9002(19991121)437:2-3<359:XMOTSS>2.0.ZU;2-2
Abstract
We report here the results of a mesh experiment to measure the subpixel str ucture of the EPIC MOS CCDs on board the XMM X-pay observatory. The pixel s ize is 40 mu m square while the mesh hole spacing is 48 mu m, a combination quite different from our standard mesh experiment. We have verified that t his combination functions properly and have analyzed the CCD structure with sub-pixel resolution. The EPIC MOS CCD has an open electrode structure to improve detection efficiency at low energies. We obtained the distribution of various grades of X-ray events inside the pixel. A horizontally split tw o-pixel event is generated near the channel stop which forms a straight ver tical pixel boundary whereas a vertically split two-pixel event is generate d where the potential due to the thinned gate structure forms a wavy horizo ntal pixel boundary. Therefore, the effective pixel shape is not a square b ut is distorted. The distribution of X-ray events clearly shows that the tw o etched regions in each pixel, separated by the bridging finger of the enl arged (open) electrode. We measured the difference in X-ray transmission be tween the conventional and open regions of the pixel using O-K and Cu-L X-r ay emission lines, and found it to be consistent with an electrode thicknes s comprising 0.2 +/- 0.1 mu m of Si and 0.6 +/- 0.2 mu m of SiO2. (C) 1999 Elsevier Science B.V. All rights reserved.