A new approach to nuclear microscopy: the ion-electron emission microscope

A new multidimensional high lateral resolution ion beam analysis technique, ion-electron emission microscopy (IEEM) is described. Using MeV energy ion s, IEEM is shown to be capable of ion beam induced charge collection (IBICC ) measurements in semiconductors. IEEM should also capable of microscopical ly and multidimensionally mapping the surface and bulk composition of solid s. As such, TEEM has nearly identical capabilities as traditional nuclear m icroprobe analysis, with the advantage that the ion beam does not have to b e focused. The technique is based on determining the position where an indi vidual ion enters the surface of the sample by projection secondary electro n emission microscopy. The x-y origination point of a secondary electron, a nd hence the impact coordinates of the corresponding incident ion, is recor ded with a position sensitive detector connected to a standard photoemissio n electron microscope (PEEM). These signals are then used to establish coin cidence with IBICC, atomic, or nuclear reaction induced ion beam analysis s ignals simultaneously caused by the incident ion. (C) 1999 Elsevier Science B.V. All rights reserved.